FCP11N60N mosfet equivalent, n-channel mosfet.
* RDS(on) = 255 mΩ (Typ.) @ VGS = 10 V, ID = 5.4 A
* Ultra Low Gate Charge (Typ. Qg = 27.4 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 130 pF) <.
such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
D
GDS
TO-220
GDS
TO-.
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise pro.
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